CAN BAYRAM

RESEARCH INTERESTS

Mr. Bayram's Ph.D. research area is wide bandgap semiconductor devices including III-N materials (AlGaInN) and II-VI materials (ZnO). His research interests include semiconductor device design/simulation, material growth/characterization, device processing/packaging/measurement.

He has performed more than 2000 MOCVD growths up-to-date. He has improved AlxGayIn(1-x-y)N layers (where [0,0]< [x, y] < [1,1]), and integrated them into self-designed nitride optoelectronic devices. By using state of the art material characterization tools such as atomic force microscopy, scanning electron microscopy, photoluminsecence measurements, X-ray diffraction equipments, and Hall measurements, he has correlated the material growth, characterization and (structural (surface, crystallographic), optical, electrical) material quality that leaded to world's first and world's highest performance nitride optoelectronic devices.

By using conventional and state-of-the-art semiconductor fabrication techniques and equipments (such as rapid thermal annealing, electron cyclotron resonance reactive ion etching, electron beam metal evaporator, plasma-enhanced chemical vapor deposition, photo- and e-beam-lithography systems), he has fabricated more than 300 wide bandgap semiconductor devices ranging from UV APDs to blue and green LEDs. Combining the device performance with the material growth, a unique blend of semiconductor knowledge is gathered in-house, and being implemented.

His current research interests include avalanche and single photon detection in UV spectral region, and high power blue-green-white light emitting diodes. He is currently developing high quality Al(Ga)N/GaN superlattices for intersubband devices operating in near-, mid-, far-infrared, and THz regime.

HIS PRIMARY CONTRIBUTIONS TO THE III-NITRIDE INTERSUBBAND RESEARCH

(2) Demonstration of world's first MOCVD-grown AlGaN/GaN SLs with intersubband absorbance as high as 5.3 µm (2009).

(1) Demonstration of world's first MOCVD-grown AlN/GaN SLs absorbing at optical communication wavelengths (as low as at 1.5 µm) (2009).

HIS PRIMARY CONTRIBUTIONS TO THE ULTRAVIOLET DETECTORS

(7) Demonstration of world's first nanopillar GaN photodiodes (2008),

(6) Demonstration of world's highest quantum efficiency inheritly-ultraviolet APDs (2008),

(5) Demonstration of world's highest linear gain in UV GaN APDs (2008),

(4) Demonstration of world's first back-illuminated Separate Absorption & Multiplication GaN APDs (2008),

(3) Demonstration of world's first UV Single Photon Detection with GaN APDs (2007),

(2) Demonstration of world's highest linear gain in UV GaN APDs (2007),

(1) Demonstration of world's first back-illuminated linear mode GaN APDs (2007).

HIS PRIMARY CONTRIBUTIONS TO THE SOLID STATE LIGHTING

(3) Demonstration of world's first white light emitting diodes based on Stranski-Krastanov mode-grown InGaN quantum dots (2009),

(2) Demonstration of world's first green light emitting diodes grown on LEO GaN (2008),

(1) Demonstration of world's first hybrid green LED based on n-ZnO / (In)GaN MQW / p-GaN (2008).

HIS PRIMARY CONTRIBUTIONS TO THE MATERIAL GROWTH OF III-NITRIDES

(7) Development of high quality AlGaN/GaN SLs with intersubband absorptions as high as 5.3 µm (2009),

(6) Establishment of a unique pulsed growth scheme for high quality AlN/GaN SLs for intersubband absorption at near-infrared regime (2009),

(5) Development of self-assembled InGaN quantum dots emitting in green spectra at room temperature (2009),

(4) Establishment of a unique five-step growth scheme for high quality and reproducable lateral epitaxial overgrowth (LEO) GaN leading to world's first green LEDs on LEO GaN (2008),

(3) Realization of high quality AlGaN leading to world's highest quantum efficiency inheritly-ultraviolet APDs (2008),

(2) Realization of highly doped high quality p-GaN via delta-doping on AlN/Sapphire leading to world's first hybrid green LED based on n-ZnO / (In)GaN MQW / p-GaN , and world's highest linear gain in UV GaN APDs by delta-doped p-GaN (2008),

(1) Realization of high quality GaN regrowth and inherit AlN templates leading to world's highest linear gain in UV GaN APDs and world's first UV Single Photon Detector (2007).