CAN BAYRAM

RESEARCH INTERESTS

My Ph.D. research area is wide bandgap semiconductor devices ranging from III-N materials (AlInGaN) to II-VI materials (ZnO). My research interests include semiconductor device design/simulation, material growth/characterization, device processing/packaging/measurement.

I have performed more than 2000 MOCVD growths up-to-date. I have improved AlxGayIn(1-x-y)N layers (where 0< x< 1.0, 0.3 < y < 1.0), and integrated them into self-designed nitride optoelectronic devices. By using state of the art material characterization tools such as atomic force microscopy, scanning electron microscopy, photoluminsecence, X-ray diffraction, and Hall characterization, I have correlated the material growth, characterization and (structural (surface, crystallographic), optical, electrical) material quality that leaded to world's first and world's highest performance nitride optoelectronic devices.

By using conventional semiconductor fabrication techniques and tools (such as ECR-RIE, metal evaporator, lithography...), I have fabricated more than 300 wide bandgap semiconductor devices ranging from UV APDs to blue and green LEDs. Combining the device performance with the material growth, a unique blend of semiconductor knowledge is gathered, and being implemented.

My current research interests include avalanche and single photon detection in UV spectral region, and high power blue-green light emitting diodes.

MY PRIMARY CONTRIBUTIONS TO THE FIELD

(6) Demonstration of world's first hybrid green LED based on n-ZnO / (In)GaN MQW / p-GaN (2008)

(5) Demonstration of world's highest linear gain in UV GaN APDs by delta-doped p-GaN (2008)

(4) Demonstration of world's first back-illuminated Separate Absorption & Multiplication GaN APDs (2008)

(3) Demonstration of world's first UV Single Photon Detection with GaN APDs by material optimization (2007)

(2) Demonstration of world's highest linear gain in UV GaN APDs by (AlN and GaN) material optimization (2007)

(1) Demonstration of world's first back-illuminated linear mode GaN APDs (2007)