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Home >Research > Research Areas >Solid State and Photonics Research Projects
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State and Photonics Research Projects |
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Lightwave Propagation, Cavity Self-Formation, and Lasing in Strongly Scattering Media Members: S. T. Ho, H. Cao, and R. P. H. Chang Sponsor: National Science Foundation This project investigates lasing processes that our group discovered recently in polycrystalline or nanocrystalline ZnO and GaN particle semiconductors. We postulate that formation of closed loops and photon localization are possible mechanisms for lasing. Our research activities include: (1) near-field microscopic measurement of the intensity distribution; (2) numerical simulation of lightwave propagation and cavity formation in random media; and (3) fabrication of optoelectronic devices such as waveguides and lasers with semiconductor polycrystalline and nanoparticle films on various substrates. If successful, our work could improve the understanding of nanoparticle films and the physics of nanostructures, potentially leading to novel device applications.
Science of New Materials Members: S. T. Ho Sponsor: National Science Foundation This is a collaborative effort with research groups in the Materials Science, Chemistry, and Physics Departments to study new materials for device applications. Current research projects include: (1) novel optical phase and amplitude modulators based on erbium-doped ferroelectric thin films; (2) potentially low-voltage, high-speed optical phase and amplitude modulators based on self-assembled organic polymers having very high electro-optic coefficients; (3) large-bandgap semiconductors; and (4) materials having strain-induced quantum dots / wires.
Self-Assembled Materials Systems and Devices for RF / Lightwave Integrated Circuits Members: S. T. Ho Sponsor: Army Research Office Present-generation radio frequency (RF) systems are severely challenged by the lack of compact, lightweight, inexpensive components capable of efficient broadband analog signal distribution and processing. This research is a focused collaborative program to develop and implement a unique multilayer materials system for very low-voltage, ultrahigh-frequency electro-optic modulators for RF / lightwave integrated circuits.
Electrical and Thermal Characterization of New Ternary Rare-Earth Based Materials for High Performance Thermoelectrics Members: C. Kannewurf Sponsor: Defense Advanced Research Projects Agency / Michigan State University The goal of this program is to discover new rare-earth and main-group-element materials having a high thermoelectric figure of merit. The focus is on narrow bandgap, heavy-element semiconductors and new ternary and quaternary compounds having itinerant electrons occupying a narrow distribution of energy near the Fermi level. These materials possess structural and electronic-band features that make them excellent candidates for use as thermoelectrics.
Electrical Measurements of Thin Films and Nanostructures Members: C. Kannewurf Sponsor: National Science Foundation This project provides charge-transport measurements for the NSF-sponsored Materials Research Center. For several components of the program, an understanding of the electrical and thermal properties of ultra-thin films is extremely important. In addition, recent emphases have been placed on characterizing the physical properties of organic field-effect transistor structures and transparent conducting oxide films. To this end, key collaborations have been formed with researchers in the Departments of Chemistry and Materials Science and Engineering.
Novel Bismuth Chalcogenides as Thermoelectric Materials Members: C. Kannewurf Sponsor: Office of Naval Research / Michigan State University The initial work on this program has led to the development of new thermoelectric materials. Notable results were obtained for the Cs-Bi-Te and K-Bi-Se systems. In particular, CsBi4Te6 has been identified as the best thermoelectric material below 300ÚK, surpassing the figure of merit for all Bi2Te3 compositions in that range. At present, compositions from the K-Bi-Se system are being exploited by industry to develop devices operating above 300ÚK.
High Detection Efficiency Photon Counters at 1064 nm and Their Use in a Novel Quantum Imaging Scheme Members: P. Kumar Sponsor: National Aeronautics and Space Administration This is a training grant for Paul Voss. Indium gallium arsenide and germanium avalanche photodiodes (APD’s) are being studied when used as photon counters. Methods of optimizing the low-light-level performance of APD’s in the near infrared are being investigated. A related objective is to adapt the statistical technique of optical homodyne tomography (OHT) for use in LIDAR applications. OHT has the advantage that relatively inexpensive high-quantum-efficiency PiN photodiodes can be used in low-light applications where photon counting is usually required. The idea behind OHT is similar to medical tomography where a 2-D or 3-D mass distribution is reconstructed from measurements of absorption at many particular angles, but in OHT it is the quantum state of radiation that is reconstructed from statistics of interference between a local oscillator and a very weak signal.
Instrumentation to Characterize Short-Pulse Interactions for Producing Entangled Light Beams in Optical Fibers Members: P. Kumar Sponsor: Army Research Office This grant is to purchase equipment to characterize short-pulse interactions in optical fibers for the purpose of producing quadrature entangled as well as polarization entangled light beams. The equipment would permit us to make systematic measurements of the fiber (standard, dispersion-shifted, as well as holey fibers) nonlinearities, allowing us to quantify the relative contributions of the Kerr, Raman, and other higher-order nonlinear processes. Such quantification is essential for producing quantum mechanically entangled light beams possessing a high degree of quantum correlation.
Instrumentation to Measure the Error Performance of Quantum-Limited Optical Bit-Processing Devices that Utilize Short-Pulse Parametric Interactions Members: P. Kumar Sponsor: Air Force Office of Scientific Research This grant is to purchase a digital data analyzer (DDA) which combines the functions of pulse-pattern generation and error detection into one instrument. The DDA measures the error performance of optical bit processing devices that include fiber-optic cache-memory buffers, tunable clock recovery modules, and picosecond-pulse all-optical regenerators. All of these take advantage of the ultrafast parametric nonlinearity of glass fiber. We are developing these devices to demonstrate optical digital communication and processing at the quantum limit. Such devices will be capable of operating at speeds in excess of 100 Gb/s, and will be essential for deploying packet-switched ultrahigh-speed time-division multiplexed all-optical networks.
Integrated Devices for Terabit/Second 1.3 and 1.5 Micron WDM/TDM Network Applications Members: P. Kumar, S. T. Ho, and B. Wessels Sponsor: Defense Advanced Research Projects Agency / Air Force Multidisciplinary University Research Initiative We are developing novel, compact, integrated, optoelectronic and optical devices for use in ultrahigh-speed wavelength-division-multiplexed and time-division-multiplexed networks. The devices include: (1) fiber-optic parametric-amplification-based storage buffers, tunable pulsed oscillators, time-domain demultiplexers, clock extractors, and regenerators; (2) microcavity lasers, modulators, and multiplexers / demultiplexers; and (3) thin-film optically active waveguide modulators and amplifiers. These devices will be capable of operating at speeds approaching 1 terabit per second. A number of specific collaborative research projects are being pursued. The collaboration spans three academic disciplines and an industrial partner (a small business subcontractee).
MURI Fellow on Quantum Information Technology: Entanglement, Teleportation, and Quantum Memory Members: P. Kumar Sponsor: Army Research Office This project provides supplemental support for a Multidisciplinary
University Research Initiative (MURI) Fellow to work on additional topics
in the area of quantum information technology. As a result, these topics
have become part of the MIT/NU MURI funded by the Army Research Office.
Specifically, Jay E. Sharping, a graduate student in the ECE Department,
is being supported to work on the following additional research tasks:
Nonlinear Fiber-Optics with Picosecond Pulses for All-Optical WDM/TDM Systems Members: P. Kumar and W. Kath Sponsor: National Science Foundation Recent development of the “all-wave” optical fiber opens up the possibility of massive wavelength-division multiplexing across a wavelength range that extends from 1200 to 1600 nm. To take advantage of this ever-widening transmission window, a collaborative experimental / theoretical research program is undertaken to demonstrate control of short pulses (< 1 ps) in fiber-optic communication systems and networks by use of parametric amplification. Our theoretical and experimental work has shown that parametric amplification can process signals optically while suppressing a number of effects that are detrimental to high bit-rate (potentially approaching 100’s of Gbit/s per channel) transmission, storage, clock recovery, regeneration, and wavelength conversion.
Quantum Information Technology: Entanglement, Teleportation, and Quantum Memory Sponsor: Army Research Office Multidisciplinary University Research Initiative (with MIT) This multidisciplinary university research initiative (MURI) addresses key issues relevant to the development of quantum information technology. The preeminent obstacles to such development include the difficulty of transmitting quantum information over noisy and lossy quantum communication channels, recovering and refreshing the quantum information that is received, and then storing the information in a reliable quantum memory. To overcome these obstacles, MIT and Northwestern have assembled a multidisciplinary theoretical/ experimental team in the areas of quantum communication and measurement, quantum computation, nonclassical light-beam generation and detection, nonlinear optics in bulk crystals and optical fiber, computational complexity and error-correcting codes, and atomic physics. This team is conducting a research program that addresses: (1) entanglement, teleportation, and quantum storage using singlet photon states; (2) entanglement and teleportation using field quadratures; and (3) new paradigms for quantum communication and memory. The Northwestern effort focuses on the generation of entangled-photon pulses in optical fibers and the theory of quantum communication and fiber quantum memory.
Quantum Optics with a Q-Switched Pump Source Members: P. Kumar Sponsor: Office of Naval Research High pump power, a must for most nonlinear optical effects, is easily obtained with the use of a Q-switched laser. Recently, we have demonstrated that such a laser can be employed in quantum-optics experiments with great success. Unlike the case with optical cavities, quantum effects are observed in a single-pass traveling-wave type of interaction with a nonlinear medium, resulting in a large temporal bandwidth. Our approach to quantum-light generation has been followed in many laboratories around the world. We have demonstrated the generation of squeezed states of light, twin-beam states of light, and sub-Poissonian states of light. Using a setup that self-generates a matched local oscillator for the detection of squeezing, in 1994 we observed 5.8±0.2 dB of quadrature squeezing, which is still the highest to date for a single-pass traveling-wave experiment. In this program, we are conducting such proof-of-principle experiments that demonstrate the use of a Q-switched pump laser in the generation and application of pulsed twin-beams and squeezed states of light. In the past few years, our major thrust has been to perform pulsed sub-shot noise imaging experiments. In particular, we have demonstrated quantum correlations in images that have been parametrically amplified and performed experiments to show that noiseless image amplification is possible with optical parametric amplifiers.
Squeezed Light Generation by Means of Traveling-Wave Nonlinear Interactions in Lithium Niobate Waveguides Members: P. Kumar Sponsor: National Science Foundation This is an experimental program to develop an integrated lithium-niobate waveguide device for use as a reliable, compact source of highly-squeezed-light with relatively low-power mode-locked lasers. The experiments rely on traveling-wave degenerate second-harmonic generation and optical parametric amplification exploiting the c(2) nonlinearity of lithium niobate. These experiments are based on our analyses of traveling-wave degenerate c(2) interactions in which two indistinguishable fundamental-frequency photons and one second-harmonic photon participate. This is a collaborative project with Prof. M. Fejer of Stanford, who is fabricating and developing the required integrated, quasi-phasematched, low-loss, lithium niobate waveguides.
Advanced Lasers and Detector Integrated Systems (ALADINS) Members: M. Razeghi Sponsor: Defense Advanced Research Projects Agency / Office of Naval Research The objective of this four-year project is to develop advanced lasers and photodetectors operating in the ultraviolet (UV)-blue wavelength range between 365 and 450 nm. To date, only Nichia Chemicals in Japan has successfully demonstrated and commercialized (as of October 1, 1999) a long lifetime continuous wave violet laser diode emitting at 400 nm, while no other institution is even close to this stage. The focus of this project will be to demonstrate low threshold continuous wave, edge emitting lasers in this country which can compete with or be better than the current state of the art. When integrated, such laser and photodetector components would be capable of performing two distinct tasks that benefit the needs of future DoD missions for sensing and recognition.
AlGaN for Solar-Blind Focal Plane Arrays Members: M. Razeghi Sponsor: Defense Advanced Research Projects Agency / Office of Naval Research Wide bandgap AlGaN semiconductors are novel materials which hold the promise to revolutionize numerous optoelectronic and electronic systems by making these less costly, more efficient, and more reliable. The objective of this project is to deposit atomic layers of AlxGa1-xN films by metalorganic chemical vapor deposition, design and fabricate ultraviolet (UV) photodetectors utilizing these materials. The key desired property is both their high sensitivity to UV light and, at the same time, their insensitivity to visible and infrared light. To date, the Center has been the first to demonstrate solar blind detectors and has achieved the highest efficiency and wavelength versatility for such UV photodetectors.
Back-Side-Illuminated Solar-Blind Al(x)Ga(1-x)N UV Photodiodes by Lateral Epitaxial Overgrowth – Phase I Members: M. Razeghi Sponsor: MP Technologies /Air Force Office of Scientific Research This program seeks to demonstrate the feasibility of lateral epitaxial growth (LEO) to synthesize high-quality, very-wide-bandgap, Al(x)Ga(1-x)N materials by MOCVD for use as a base template in back-side-illuminated, solar-blind, ultraviolet photodiodes exhibiting a cutoff wavelength l~270 nm. Key technical challenges involve improving the Al(x)Ga(1-x)N material quality for high Al concentrations to enhance the n-type conductivity and reduce the dislocation count. The LEO process will be investigated and optimized to achieve these objectives. The Al(x)Ga(1-x)N materials will be characterized through x-ray diffraction, atomic-force microscopy, scanning and transmission electron microscopy, as well as capacitance-voltage measurements. P-i-n ultraviolet photodiodes using these materials will be grown, fabricated and measured. Their electrical and optical performance will be benchmarked using parameters such as responsivity and solar blindness. Results will be compared with those from identical detectors fabricated using standard non-LEO technology in order to address the potential of the proposed LEO technique.
Fabrication and Characterization of AlGaN UV Solar-Blind Photodetectors Members: M. Razeghi Sponsor: Office of Naval Research Detection of small ultraviolet signals without interference by ambient sunlight is very important in defense applications such as flame detection and missile countermeasures. AlGaN alloys are ideal for solar-blind photodetectors since they have high rejection ratios against ambient visible light. This project demonstrates solar-blind AlGaN ultraviolet detectors having rejection ratios of 106, the highest ever reported.
Flip-Chip Bonding Machine Members: M. Razeghi Sponsor: Office of Naval Research This project will create a flip-chip bump bonding facility in the Center for Quantum Devices (CQD). The equipment will be used to carry out development work involving the hybridization of wafers of novel semiconductor materials containing arrays of high-performance photon detectors with wafers of silicon CMOS circuitry. This will permit construction of prototype imaging focal plane array (FPA) assemblies wherein a photon-sensitive detector array is mated to its associated acquisition and processing electronics. Ultimately, the project aims at reducing or eliminating the time required to transfer complex crystal-synthesis technology to the defense industry. Prototype imaging FPA’s based on novel materials could then be made available much more rapidly for system-level flight trials, live-fires, and battle-lab demonstrations.
Infrared Semiconductor 3–5 µm High-Power InAsSb Based Injection Laser Members: M. Razeghi Sponsor: Air Force Research Laboratory The objective of this work is to develop high-power, high-temperature semiconductor injection mid-infrared lasers through the design, growth and characterization of Sb-based Strained-Layer Superlattice (SLS) laser structures emitting with l ~ 4 mm operating in pulse and continuous mode. The prior related research on both Sb-based double heterostructure (DH) and multiple quantum well (MQW) lasers shows that the use of Sb-based growth technology for mid-infrared laser diodes has been properly developed, and a well established processing technique has been optimized for this material system. Additionally, the initial research on SLS lasers has produced lasers with record operating characteristics which demonstrates the feasibility of these lasers to operate with high output powers at high temperatures.
Investigation of III-Nitride Alloys for UV Photodetectors and Blue-Green Lasers Members: M. Razeghi Sponsor: Office of Naval Research The physical processes of how lasing takes place in InGaN material systems are not fully understood. This project studies the physical origin of the radiative-recombination process in GaN, AlN, and AlGaN III-N nitrides alloys in both theory and experiment. Model calculations are performed for optical gain and luminescence emission in TE and TM polarization with strain and quantum-size effects. Based on this newly-developed physical understanding, high-speed, high-resistivity GaN p-i-n photodiodes and AlGaN photoconductors are demonstrated up to a maximum operating frequency of 98 GHz and a wide range of detection wavelengths as short as l = 200 nm, a record.
Material for Superlattice Infrared Detectors – Phase II Members: M. Razeghi Sponsor: MP Technologies / Air Force Research Laboratory The objective of this project is to optimize the design of Sb-based type-II superlattices and devices based on these heterostructures for very-long-wavelength infrared (VLWIR) photon-detector applications. Examples of applications of these devices include high-resolution medical thermal imaging, monitoring of chemical quality and process control, remote sensing, and free-space communication. The research will first consist of modeling and optimizing the designs of superlattices and devices to achieve enhanced performance characteristics. The epitaxial growth used to grow these structures will be optimized and their quality evaluated. Detector devices will be fabricated through a series of processing steps and their performance measured and modeled.
QWIP on Silicon Effort – Phase II Members: M. Razeghi Sponsor: Nova Research / U.S. Air Force Rome Lab This project is a research and development effort with the goal of growing a high quality InGaAs/InP QWIP detector structure onto a silicon structure. We characterize the resulting detector structure by measuring I-V curves, signal and dark current response, spectral responsivity, and D. An additional goal is to deposit an array of detectors onto the backside of a wafer containing readout circuitry on the top side.
Semiconductor Laser for 2–5 µm and 7–9 µm Region / Quantum Cascade Lasers Members: M. Razeghi Sponsor: Defense Advanced Research Projects Agency / U.S. Army The quantum cascade laser is a novel type of semiconductor laser that is based on electronic radiative transition between subbands within a quantum well, and can be used for long wavelength laser emission (l = 3 to 20 mm). In order to realize this type of laser, it is necessary to make atomic scale thin layers of semiconductors with an angstrom resolution. Our work aims at developing a device design model and experimentally realize the device using state-of-the-art semiconductor technology. In this project, room temperature operation of quantum cascade lasers with maximum optical output power up to 0.77 W was demonstrated by researchers at the Center for the first time using single-step growth method based on gas-source molecular beam epitaxy technique.
Solar-Blind Al(x)Ga(1-x)N UV Photodiodes by Lateral Epitaxial Overgrowth – Phase II Members: M. Razeghi Sponsor: MP Technologies / Office of Naval Research The objective of this program is to achieve Al(x)Ga(1-x)N-based p-i-n ultraviolet (UV) photodetectors having a high degree of solar-blindness, high external quantum efficiency, and low dark currents. The research will consist of improving the Al(x)Ga(1-x)N material quality in terms of crack reduction and doping enhancement, modeling and designing the optimum device structures, and developing reflectivity coatings for improved device performance. Such optoelectronic devices will be beneficial in numerous defense and commercial applications including early warning of missile threats, UV countermeasures, portable battlefield chemical / biological warfare analysis, flame detection, combustion, engine control and monitoring, and nuclear reactors.
Type-II Superlattices for Very Long Wavelength Infrared Detectors Members: M. Razeghi Sponsor: Air Force Office of Scientific Research Very-long-wavelength infrared (VLWIR) detectors are required for space-based early detection of long-range ballistic missiles. Present VLWIR devices employ HgCdTe, quantum-well, and extrinsic silicon photodetector technologies. However, due to several inherent limitations, these devices do not meet future performance needs. Type-II superlattices have been proposed as an alternative. In comparison with HgCdTe technology, the higher effective mass of electrons and holes in Type-II superlattices and their slower Auger recombination can lead to lower dark current and higher operating temperature. Moreover, Type-II superlattices are based on III-V material systems which have much greater mechanical strength and radiation hardness than II-VI material systems (e.g., HgCdTe). Type-II superlattices also have excellent uniformity over large areas, which is one of the most important issues in the realization of VLWIR focal-plane arrays. Epitaxial growth of Type-II superlattices has always been an important issue for their structural, optical, and electrical qualities. However, available growth techniques do not meet the required quality for the mixed anion heterostructures due to their unusual sensitivity to the interfaces. The technical objectives of this project are to reduce the surface roughness and control the interfaces of Type-II superlattices. Tasks include: study of substrate orientation, optimization of the growth conditions for smooth surfaces, optimization of the growth conditions for abrupt surfaces, optimization of the molecular beam epitaxy shutter sequence, and study of the critical thickness and growth stability of superlattices.
Uncooled Infrared Photon Detectors Members: M. Razeghi Sponsor: Office of Naval Research; MP Technologies / Office of Naval Research Infrared photon detectors that can operate at room temperature (i.e., uncooled) hold great promise for numerous situations by making such components more cost efficient, smaller, and more reliable. They would also be several orders of magnitude faster than currently existing technology which relies on thermal detectors. This project aims at developing novel semiconductor materials and growth technology, as well as device structures and designs to realize this cutting-edge device. To date, researchers at CQD have been demonstrated photon detectors with similar sensitivity to thermal detectors, but nearly six orders of magnitude higher speed.
FDTD Calculation of Cellular Wave Diffraction Coefficients Members: A. Taflove Sponsor: Motorola Current cellular RF planning tools inaccurately model electromagnetic wave diffraction from the corners and edges of buildings. Inaccurate diffraction models lead to significant errors in RF coverage predictions for cellular systems in urban environments. This project seeks to develop highly accurate diffraction models for corners and edges of buildings comprised of practical materials such as brick, concrete, glass, etc.; generate a Motorola-proprietary library of diffraction coefficients; and develop means to efficiently incorporate these diffraction coefficients into current Motorola cellular RF planning software.
FDTD Modeling of Novel Wireless Interconnects for Ultrahigh-Speed Digital Applications Members: A. Taflove Sponsor: Intel Continuous metal-path interconnects have always been used in computers. However, metal interconnects may not be sufficiently robust to deal with the >10-GHz clock frequencies expected by 2010. These clock speeds (more than triple those of today) will increase data bandwidths to ~100 GHz, and thereby will reduce the usefulness of metal interconnects due to degraded signal integrity and increased cross-coupling/radiation. The objective of this project is to use FDTD modeling to explore a paradigm shift that would eliminate metal interconnects. Instead, the baseband digital data stream would amplitude-modulate a millimeter-wave carrier in the order of 0.5 THz, creating a bandpass data spectrum. This spectrum would be wirelessly transmitted between two points by the waveguiding action of defects in a photonic bandgap structure comprised of a periodic lattice of metal pins in air. FDTD modeling would establish the theoretical feasibility of this type of data transmission and place bounds on key parameters of the waveguiding action such as transmission flatness, attenuation, and phase linearity over the data spectrum.
Updateable Anti-Drug Public Service Announcements Through Recorded Music Members: A. Taflove Sponsor: U.S. National Institute on Drug Abuse (subcontracted through SixtySeven Kilohertz, Inc. Teens spend more time with recorded music than any other media. The goal of this STTR project is to develop the technology and system to integrate wirelessly updated messages with recorded music (e.g., CD, MP3). This design will be capable of targeting anti-drug messages to music genres empirically shown to be preferred by kids likely to use drugs (e.g., heavy metal). Preliminary analyses and a proof-of-concept prototype point to the viability of this approach. We expect, that when commercialized, this system will provide an effective medium for reaching young people with targeted anti-drug public service announcements.
Defect Structure of Epitaxial Wide Gap III-V Semiconductors Members: B. Wessels Sponsor: National Science Foundation The defect structure of epitaxial gallium nitride and other wide-bandgap semiconductors is under investigation to optimize their electrical properties. Of special interest are the factors that determine p-type conductivity. Measurement techniques include photoluminescence spectroscopy, transient photoluminescence, and photocapacitance spectroscopy.
Doping Mechanisms in Wide-Bandgap Group III Nitrides Members: B. Wessels Sponsor: Office of Naval Research This grant involves the factors which determine the p-type conductivity of GaN and it alloys. Epitaxial thin films are deposited by metalorganic vapor phase epitaxy. The films are characterized both electrically and optically. The experimental data are analyzed with respect to recent theories on co-doping effects.
Instrumentation for Integrated Photonic Device Research Members: B. Wessels Sponsor: Ballistic Missile Defense Organization A chemical vapor deposition reactor is being acquired for the metal-organic vapor phase epitaxy of ferroelectrics. This apparatus will be used in research in thin films for integrated optics.
Materials Research Science & Engineering Center Members: B. Wessels Sponsor: National Science Foundation This project involves the synthesis and characterization of ferroelectric thin films for nonlinear optical applications. This is a collaborative project involving faculty from the Departments of Electrical and Computer Engineering, Materials Science and Engineering , and Chemistry.
Thermal Spraying of Meso-Electronic Multilayers and Sensors Members: B. Wessels Sponsor: Defense Advanced Research Projects Agency / State University of New York Stonybrook In this collaborative project between the State University of New York (SUNY) at Stony Brook and Northwestern, thermal spraying is being developed to form thick-film dielectric materials directly on substrates at temperatures below 200ÚC. Direct writing of lines is being explored. Important potential applications of this technology include sensors and antennas.
Thin Film Modulators for Si-Based Optoelectronics Members: B. Wessels Sponsor: Ballistic Missile Defense Organization / SVT Associates This is an STTR program to develop integrated optics using silicon as a platform. Metal-organic molecular beam epitaxy techniques for this purpose are being developed. The ultimate goal is to develop integrated electro-optic modulators for telecommunications applications.
Amorphous Computing in a High-Speed Secure Quantum Network via Anonymous Quantum Keys Sponsor: Army Research Office This project is a proof-of-concept experimental effort to demonstrate the anonymous-key and secret-key quantum cryptographic techniques theoretically introduced by the PI, H. Yuen. These techniques, which utilize the quantum noise of ordinary laser light, are well suited for deployment over the fiber-optic core networks that carry most of the Worldwide Web traffic.
Lightwave Cryptographic Techniques Members: H. Yuen and A. Sahakian Sponsor: Defense Advanced Research Projects Agency The objective of this project is to develop new cryptographic techniques, and to modify the important existing ones, for applications to encryption and authentication in energy-constrained sensors with limited memory and computational capability. The goal is to minimize power consumption in order to maximize the lifetime of the sensor operation and the amount of useful processing that can be carried out within the lifetime.
Reliable Computation with Unreliable Components Members: H. Yuen Sponsor: Defense Advanced Research Projects Agency This study explores the fundamental information-theoretic basis of fault-tolerant computation with imperfect and/or imprecise devices.
Ultra-Secure and Ultra-Efficient Quantum Cryptographic Schemes for Optical Systems, Networks, and the Internet Sponsor: Defense Advanced Research Projects Agency / U.S. Air Force This project is developing new quantum cryptographic schemes that can be realized with currently available technology and readily implemented in a wide variety of optical systems including fiber-optic networks and satellite links. Potentially, the new schemes can replace computational cryptography, and with matching networking protocols, improve the way in which information security is achieved over the Internet. Two industrial partners are involved: Telcordia Technologies of Red Bank, NJ, and BBN Technologies of Cambridge, MA. These firms seek to develop prototype systems for integration into core optical networks. |
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© 2002 Department of Electrical and Computer Engineering, |
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