Solid-State Engineering

Principal Investigator: C. R. Kannewurf

Sponsor: National Science Foundation (NSF), 12/95 – 11/99

A number of new compounds have been prepared of the type ALn₃ Te₈ (A = Cs or Rb, Ln = Ce; A = K, Ln = Nd) which display an interesting defect square. For such materials, recent theory predicted a charge-density wave that leads to infinite zig-zag (Te^2-₂)n chains and Te^2-₃ anions. The present work constitutes the first experimental confirmation of this prediction. The initial transport measurements on both single-crystal and pressed pellets samples indicate p-type conduction for narrow-gap semiconductors.

Co-Principal Investigator: C. R. Kannewurf

Sponsor: NSF (Materials Research Center), 2/97 – 11/98

This is an ongoing investigation of polymer-based mixed conductors and nanocomposite materials such as the intercalation of polymers into semiconducting vanadium oxides. Attention is now also being given to possible organic device structures and conducting ceramics. Some of this work is a collaborative effort with other IRG groups of the Materials Research Center.

Principal Investigators: C. R. Kannewurf and M. G. Kanatzidis (Michigan State University)

Sponsor: Defense Advanced Research Projects Agency (DARPA) / Michigan State University, 1/98 – 12/01.

The goal of this program is to discover new rare-earth and main-group-element materials having a high thermoelectric figure of merit. The focus is on: (a) narrow bandgap, heavy-element semiconductors; and (b) new ternary and quaternary compounds having itinerant electrons occupying a narrow distribution of energy near the Fermi level. These materials possess structural and electronic-band features that make them excellent candidates for use as thermoelectrics.

Principal Investigator: C. R. Kannewurf

Sponsor: Office of Naval Research (ONR) / Michigan State University, 9/94 – 6/01

Electrical and thermal characterization studies are provided for the ternary chalcogenides. Notable results have been obtained for R–Bi–Te (R = Cs, K) compositions. The current project determines doping levels to obtain the highest figure of merit for the most promising undoped samples, and extends the investigation to new bismuth chalcogenides.

Co-Principal Investigator: C. R. Kannewurf

Sponsor: NSF (Science and Technology Center for Superconductivity), 2/95 – 1/00

This program is now in its tenth year. A considerable effort has been spent on the determination of the key superconducting parameters for the thin-film project where the MOCVD preparation technique has been successfully employed for the major high-T_c systems. In collaboration with Argonne National Laboratory, recent work has involved the development of an ion-beam-assisted deposition system for preparing oxide buffer layers for the creation of coated conductors. The initial results for critical current density measurements are quite encouraging.

Sponsor: ONR, 7/96 – 9/99

This project explores the synthesis of III-N semiconductors and their alloys using a novel metastable growth process. The goal is to develop a fundamental understanding of the issues involved in producing novel, ultra-high-efficiency III-N devices operating in the blue-to-ultraviolet spectral region. Extensive modeling and characterization of the electronic properties of the material is performed in conjunction with thin-film growth.

Principal Investigator: N. Newman

Sponsor: ONR, 11/98 – 3/02

This work is an extension of the above project. It is aimed at the optimization of AlN and its alloys for optoelectronic applications in the ultraviolet spectral region.

Principal Investigator: N. Newman

Sponsor: Thermionics Labs, Inc., 2/97 – 6/99

Novel instrumentation is being developed for the demanding requirements of reactive growth. This equipment is being designed for applications in the synthesis of electronic materials such as semiconductors, superconductors, and microwave dielectrics.

Principal Investigator: N. Newman

Sponsor: BMDO, 4/99-3/00

This project provides instrumentation for in-situ characterization of material properties during III-N growth. Novel synthesis methods are being developed for the development of (1) optoelectronic devices in the blue to deep-UV spectral range and (2) high-temperature and high-power electronic devices.

Principal Investigator: N. Newman

Sponsor: NASA, 1/99-12/99

This program is aimed at optimizing properties of III-N materials and their surfaces for field-emissive devices. III-N films are synthesized on field-enhanced tip structures for uses in flat-screen TVs, and high-power microwave electron-beam technology.

Principal Investigator: N. Newman

Sponsor: DARPA, 6/99-5/00

This project involves a systematic investigation of the properties of ferroelectrics for microwave resonator and filter applications. This work studies the characteristics of the host material and existing lattice defects which cause microwave loss. The methods used will directly identify the physical source of loss, allowing for a systematic improvements in the performance of high-Q tunable microwave resonators and filters.

Principal Investigator: M. Razeghi

Sponsor: ONR, 8/92 – 12/98

The goal of this research is to experimentally demonstrate novel narrowband III-V compound semiconductor alloy InTlSb for long-wavelength infrared detector applications. While this material is theoretically predicted to have energy gap down to 0 eV depending on Tl composition, experimental verification has not been achieved yet. This is the first kind of experimental study on this new type of potentially very important material.

Principal Investigator: M. Razeghi

Sponsor: ONR, 6/95 – 8/99

InGaN–AlGaN alloys will be some of the most technologically important materials of the next century. Applications will include bright, large, full-color displays; low-cost color laser printers and photocopiers; and high-density optical storage. However, the physics and engineering issues related to experimental realization of optoelectronic devices based on these materials are far from being understood. The purpose of this research is to develop physical models related to experimental realization of ultraviolet detectors based on GaN, AlN, and AlGaN materials using a state-of-the-art semiconductor technology, the MOCVD growth technique. High-speed, high-resistivity GaN p-i-n photodiodes and AlGaN photoconductors are demonstrated based on this newly-developed physical understanding and technique. These have a maximum operating frequency of 98 GHz and a wide range of detection wavelengths as short as l  = 200 nm, a record.

Principal Investigator: M. Razeghi

Sponsor: ONR AASERT Program, 6/98 – 5/01

The physical processes of how lasing takes place in InGaN material systems are not fully understood. This project studies the physical origin of the radiative-recombination process in GaN, AlN, and AlGaN III-V nitrides alloys in both theory and experiment. Model calculations are performed for optical gain and luminescence emission in TE and TM polarization with strain and quantum-size effects. Based on this newly-developed physical understanding, high-speed, high-resistivity GaN p-i-n photodiodes and AlGaN photoconductors are demonstrated up to a maximum operating frequency of 98 GHz and a wide range of detection wavelengths as short as l  = 200 nm, a record.

Principal Investigator: M. Razeghi

Sponsor: DARPA / U.S. Army, 8/95 – 4/99

The quantum cascade laser is a novel semiconductor device based on electronic radiative transition between subbands within quantum wells. This laser can be used for long-wavelengthemission (l  = 3–20 m m). However, device fabrication requires realizing atomic-scale semiconductor layers with angstrom resolution. This project develops a design model and experimentally realizes such lasers using a state-of-the-art semiconductor technology involving a single-step growth process based on the gas-source molecular-beam epitaxy technique. For the first time, room-temperature operation is demonstrated with a maximum optical output power up to 0.5 W.

Principal Investigator: M. Razeghi

Sponsor: DARPA / U.S. Army AASERT Program, 6/96 – 5/99

Uncooled infrared photon detectors are in great demand for applications such as missile detection / situational awareness. Using the novel technique of non-equilibrium mode devices, we demonstrated the world’s first InAsSb / InAlSb double-heterostructure detectors with the highest reported detectivity at 7m m at room temperature.

Principal Investigator: M. Razeghi

Sponsor: DARPA / ONR, 5/96 – 4/99

The use of GaN, InGaN, and AlGaN materials for optoelectronic devices requires a number of novel technologies. This project investigates several aspects of optimized device design and fabrication methods including: thermal instability of InGaN; p-doping of GaN and AlGaN; and the ECR reactive-ion etching technique. Based on the new understanding developed in this study, high-brightness InGaN / GaN LED’s and CW-operating InGaN / GaN lasers are demonstrated.

Principal Investigator: M. Razeghi

Sponsor: ONR AASERT Program, 6/96 – 5/99

Growth of high-quality InGaN is difficult to achieve. This is because In has a low melting point relative to the 700˚C temperature where high-quality InGaN is obtained. In fact, the incorporation of In on InGaN depends critically on temperature. Spatial or temporal temperature fluctuations can cause detrimental spatial inhomogeneity of InGaN. This project studies the mechanisms of how temperature and growth conditions affect In incorporation on InGaN.The existence of quantum-dot-like structures caused by In spatial inhomogeneity is studied using microscopic electro-luminescence.

Principal Investigator: M. Razeghi

Sponsor: AFOSR, 7/97 – 6/00

Infrared imaging in the very-long-wavelength range is essential in many space and defense applications. This project demonstrates very-long-wavelength InGaAlAs / InP QWIP’s operating in the 13–19 m m infrared range with very sharp spectral width D l /l of only 10%.

Principal Investigator: M. Razeghi

Sponsor: ONR AASERT Program, 6/97 – 5/00

Detection of small ultraviolet signals without interference by ambient sunlight is very important in defense applications such as flame detection and missile countermeasures. AlGaN alloys are ideal for solar-blind photodetectors since they have high rejection ratios against ambient visible light. This project demonstrates solar-blind AlGaN ultraviolet detectors having rejection ratios of 10⁶ the highest ever reported.

Principal Investigator: M. Razeghi

Sponsor: DARPA / ONR, 6/97 – 5/00

InAsSb alloys have the lowest bandgaps among technically available III-V compound materials. These materials can be used for long-wavelength infrared detection (l  > 10 m m). Device structures for room-temperature or near-room-temperature operation are developed and fabricated using the MOCVD technique. This project is one of the first experimental demonstrations of these materials for long-wavelength photodetection applications in an uncooled environment.

Principal Investigator: M. Razeghi

Sponsor: AFOSR AASERT Program, 6/97 – 5/00

Multi-spectral infrared focal-plane arrays (FPA’s) are needed for applications such as advanced infrared targeting and tracking, nonmetallic land-mine detection, and noninvasive medical diagnosis. This project demonstrates the first two-color, voltage-tunable, InGaAs / InAlAs and InGaAs / InP QWIP’s at 4 m m and 8 m m on low-cost InP substrates.

Principal Investigator: M. Razeghi

Sponsor: ONR DURIP Program, 3/98 – 3/99

Stresses are generated during the growth of epitaxial layers of InGaN, AlGaN, InAsSb, and InTlSb alloys on mismatched substrates. This project uses a high-resolution X-ray diffractometer to study the mechanical and structural properties of these materials via the X-ray reciprocal-mapping technique. The results are used as feedback to optimize the growth conditions of these materials.

Principal Investigator: M. Razeghi

Sponsor:ONR, 4/98 – 3/99

Techniques to grow GaN on Si substrates can significantly benefit UV optoelectronic systems by greatly decreasing the packaging cost and increasing reliability. Lateral epitaxial overgrowth is a novel technique to grow GaN on lattice-mismatched substrates. This project uses this technique to achieve large-area growth of GaN particularly on Si substrates. High-quality epilayers are achieved with high lateral-to-vertical aspect ratios and very-low dislocation densities.

Principal Investigator: M. Razeghi

Sponsor: ONR, 8/98 – 1/99

The project sponsors the organization and administration of an international symposium held in Korea on the physics of semiconductors.

Principal Investigator: M. Razeghi

Sponsor: NASA Goddard Space Flight Center, 7/97 – 6/99

This fellowship supports a graduate student studying the development of AlGaN ultraviolet photodetectors. The research includes optimized etching and metal-contact techniques on these hard-to-fabricate materials. High-speed metal-semiconductor-metal photodetectors are demonstrated with maximum operating frequencies up to 92 GHz.

Principal Investigator: M. Razeghi

Sponsor: Picolight, Inc., 3/98 – 3/99

This project uses an atomic-force microscope to study the surface states of high-quality GaAs, GaInAs, and Sb-based materials. In particular, structural information about quantum dots created on InGaAs / GaAs is obtained. This information is used in optimizing the growth method for creating high-quality quantum dots.

Principal Investigator: M. Razeghi

Sponsor: Picolight, Inc., 4/98 – 5/99

The vertical-cavity surface-emitting laser (VCSEL) for emission at 1.3 m m is one of the most important components in low-cost and high-capacity optical communications technology. Previously, VCSEL’s were fabricated on InP substrates. However, InP techniques are less developed than Si or GaAs. This project develops VCSEL’s on GaAs substrates using a novel patterned-substrate approach. This permits mature GaAs technology to be used, allowing the integration of VCSEL’s with detectors, amplifiers, etc. The project also addresses fundamental device-fabrication issues such as etching of patterned substrates and localized epitaxial growth of semiconductors.

Principal Investigator: M. Razeghi

Sponsor: Solid-State Scientific Corp., 8/98 – 12/98

The silicide-based infrared focal-plane array (FPA) is currently the primary device used for IR imaging since it is highly compatible with silicon technology. However, due to the short carrier lifetime in the silicides, the device efficiency is only about 1%. This project demonstrates high-quality films of InAsSb on Si substrates which can replace silicide thin films and significantly improve device efficiency.

Principal Investigator: M. Razeghi

Sponsor: DARPA, 1/99-12/01

Wide bandgap AlGaN semiconductors are novel materials which hold the promise to revolutionize numerous optoelectronic and electronic systems by making these less costly, more efficient, and more reliable. The objective of this project is to deposit atomic layers of Al_xGa_1-xN films by metalorganic chemical vapor deposition, design and fabricate ultraviolet (UV) photodetectors utilizing these materials. The key desired property is both their high sensitivity to UV light and, at the same time, their insensitivity to visible and infrared light. To date, the Center has been the first to demonstrate solar blind detectors and has achieved the highest efficiency and wavelength versatility for such UV photodetectors.

Principal Investigator: M. Razeghi

Sponsor: ONR, 5/99-4/02

Infrared photon detectors that can operate at room temperature (i.e., uncooled) hold great promise for numerous situations by making such components more cost efficient, smaller, and more reliable. They would also be several orders of magnitude faster than currently existing technology which relies on thermal detectors. This project aims at developing novel semiconductor materials and growth technology, as well as device structures and designs to realize this cutting-edge device. To date, researchers at the Center have been demonstrated photon detectors with similar sensitivity to thermal detectors, but nearly six orders of magnitude higher speed.

Principal Investigator: M. Razeghi

Sponsor: Office of Naval Research (DURIP), 3/99-2/00

Enhancing the performance and functionality of optoelectronic and electronic systems requires smaller dimension components. However, the current limitations of optical lithography lie on the order of 0.5-1 m m. Further reducing the size of devices would necessitate the use of electron beam lithography. The objective of this grant is to acquire and demonstrate an electron beam lithography system which can achieve 30 nm scale features.

Principal Investigator: M. Razeghi

Sponsor: DARPA/Army, 5/99-4/00

The quantum cascade laser is a novel type of semiconductor laser that is based on electronic radiative transition between subbands within a quantum well, and can be used for long wavelength laser emission (l =3 to 20 m m). In order to realize this type of lasers, it is necessary to make atomic scale thin layers of semiconductors with an angstrom resolution. Our work aims at developing a device design model and experimentally realize the device using state-of-the-art semiconductor technology. In this project, room temperature operation of quantum cascade lasers with maximum optical output power up to 0.77 W was demonstrated by researchers at the Center for the first time using single-step growth method based on gas-source molecular beam epitaxy technique.

Principal Investigator: M. Razeghi

Sponsor: ONR, 7/99-6/00

Combining the strengths of wide bandgap GaN semiconductors and of the silicon technology can bring revolutionary technical breakthroughs in numerous optoelectronic and electronic systems, as well as considerably decrease their packaging cost and increase their reliability. Lateral epitaxial overgrowth is a novel growth technique that allows to grow GaN on very dissimilar substrates. This project aims at developing and improving this technique on silicon substrates to achieve large area low defective GaN wafers. To date, the researchers at the Center has demonstrated the first high quality GaN films on silicon substrates with a dramatically reduced defect density by following this approach.

Principal Investigator: M. Razeghi

Sponsor: Nova Research, 9/99-8/01

Quantum well infrared photodetectors (QWIPs) are advanced devices capable of detecting very long wavelength infrared radiation using advanced GaInAsP compounds. The current technology uses QWIPs manufactured on GaAs or InP substrates, which are the natural choices. However, in order to reduce the cost of systems utilizing these devices, it is desirable to synthesize them directly on Si substrates. This project aims at overcoming the technical challenges which stem from the great dissimilarity between GaInAsP compounds and Si.

Principal Investigator: M. Razeghi

Sponsor: Northrop Grumman, 6/99-1/00

Thanks to their large absorption coefficient in the ultraviolet spectral region, Al_xGa_1-xN is the best suited material system to achieve a long pass optical filter which allows light with wavelengths longer than 285 nm to pass, while blocking light with wavelengths shorter than 285 nm. Such an optical filter is more efficient than existing filters and is simpler to manufacture. This work aims at growing such an AlGaN filter with the desired cut-off characteristics.

* ( For ease of identification, each citation in this and the following sections will begin with the group faculty member(s)’ name(s))

C. R. Kannewurf, K-W. Chang, B.W. Wessels, W. Qian, V.P. Dravid, J.L. Schindler, D.B. Studebaker, T.J. Marks and R. Feenstra, "In-situ Growth and Doping of Oxycarbonate Sr₂CuO₂(CO₃) Epitaxial Thin Films,’ Physica C, Vol. 303, pp. 11-20, 1998.

C. R. Kannewurf, X.Z. Chen, S. Sportouch, B. Sieve, P. Brazis, J.A. Cowen, R. Patschke, and M.G. Kanatzidis, "Exploratory Synthesis with Molten Aluminum as a Solvent and Routes to Multinary Aluminum Silicides. Sm₂Ni(Ni_xSi_1-x) Al₄Si₆(X = 0.18 - 0.27): A New Silicide with a Ferromagnetic Transition at 17.5K," Chemistry of Materials, Vol. 10, pp. 3202-3211, 1998.

C. R. Kannewurf, L. Wang, P. Brazis, M. Rocci, and M.G. Kanatzidis), "A New Redox Host for Intercalative Polymerization: Insertion of Polyaniline Into-RuCl₃, Chemistry of Materials, Vol. 10, pp. 3298-3300, 1998.

C. R. Kannewurf, R. Patschke, P. Brazis, and M.G. Kanatzidis, "K₂Ag₃CeTe₄: A Semiconducting Tunnel Framework Made from the Covalent 'Link-Up' of [Ag₂CeTe₄]^3-Layers with Ag," Inorganic Chemistry, Vol. 37, pp. 6562-6563, 1998.

C. R. Kannewurf, R. Patschke, P. Brazis, and M.G. Kanatzidis, "Rb₂Cu₃CeTe₅: A Quaternary Semiconducting Compound with a Two-Dimensional Polytelluride Framework," Journal of Materials Chemistry, Vol. 8, pp. 2587-2589, 1998.

C. R. Kannewurf, X.-Z. Chen, P. Larson, S. Sportouch, P. Brazis, S.D. Mahanti, and M.G. Kanatzidis, "Molten Ga as a Solvent for Exporatory Synthesis, Preparation, Structure, and Properties of Two Ternary Silicides MNSI₃(M = Sm,Y)," Chemistry of Materials, Vol. 11, pp. 75-83, 1998.

C. R. Kannewurf, X.-Z. Chen, B. Sieve, R. Henning, A.J. Schultz, P.Brazis, J.A. Cohen, R. Crosby, and M.G. Kanatzidis, "Ln₂Al₃Si(Ln = Ho,Er,Tm): New Silicides from Molten Aluminum-Determination of the Al/Si Distribution with Neutron Crystallography and Melamagnetic Transitions," Angewandte Chemie, Vol. 38, pp. 693-696, 1999.

C. R. Kannewurf, L. Iordanidis, J.L. Schindler, and M.G. Kanatzidis, "ALn_{1± x} Bi_{4± x 8}(A = K, Rb; Ln = La, Ce, Pr, Nd): New Semiconducting Quaternary Bismuth Sulfides," Journal of Solid State Chemistry, Vol. 143, pp. 151-162, 1999.

C. R. Kannewurf, A. Wang, J.A. Belot, T.J. Marks, P.R. Markworth, R.P.H. Chang, and M.P. Chudzik), "Buffers for High Temperature Superconductor Coatings. Low Temperature Growth of CeO₂ Films by Metal-Organic Chemical Vapor Deposition and Their Implementation as Buffers," Physica C, Vol. 320, pp. 154-160, 1999.

C. R. Kannewurf, M.P. Chudzik, R. Erck, and M.T. Lanagan, "Processing Dependence of Biaxial Texture In Yttria-Stabilized Zirconia by Ion-Beam-Assisted Deposition," IEEE Transactions on Applied Superconductivity, Vol. 9, pp. 1490-1493, 1999.

N. Newman, S. Picozzi, A. Continenza, S. Massidda, and A. J. Freeman), "The influence of the exchang reaction on the electronic structure of GaN/Al junctions," Phys. Rev., Vol. B58, p.7906, 1998.

N. Newman, G. Rong, N. Newman, B. Shaw and D. Cronin, "The role of Ni and Zr doping on the electrical optical, magnetic and structural properties of Barium Zinc Tantalate Ceramics," J. Mat.Res., Vol 14, p.4011, 1999.

N. Newman, G. Rong, L. Tsakalakos, and J. Browning, "Epitaxial Growth of BaZn_1/3Ta_2/3O₃ thin-films for microwave applications," Materials Science Forum, Vol. 574, p.163, 1999.

M. Razeghi, C. Jelen, S. Slivken, V. Guzman, , and G. Brown, "InGaAlAs/InP Quantum Well Infrared Photodetectors for 8-20 µm Wavelengths," IEEE Journal of Quantum Electronics, Vol. 34, No. 10, October, pp. 1873-1876, 1998.

M. Razeghi, "Current Status and Future Trends of Infrared Detectors," Opto-Electronics Review. Vol. 6 , No. 3, pp. 155-194, December 1998.

M. Razeghi and D. Wu, "Recent devlopment in Sb-based MWIR interband laser diodes," Opto-Electronics Review, Vol. 6, No. 3, pp. 195-205, December 1998.

M. Razeghi, S. Slivken, V.I. Litvinov, and J.R. Meyer, "Relaxation kinetics in mid-infrared quantum cascade lasers," Opto-Electronics Review, Vol. 6, No. 3, pp. 207-216, December 1998.

M. Razeghi and J.D. Kim, "Investigation of InAsSb Infrared Photodetectors for Near Room Temperature Operation," Opto-Electronics Review, Vol. 6, No. 3, pp. 217-230, December 1998.

M. Razeghi, S. Slivken, A. Matlis, A. Rybaltowski, C. Jelen, and J. Diaz, "Low Threshold Quantum Cascade Lasers Grown by GSMBE," LEOS Newsletter, Vol. 12, No. 6, pp. 5-7, December 1998.

M. Razeghi, H. Mohseni, and V.I. Litvinov, "Interface-induced Suppression of the Auger Recombination in Type-II InAs/GaSb Superlattices," Physical Review B, Vol. 58, No. 23, No. 15, pp. 378-380, December 1998.

M. Razeghi I.H. Lee, J.J. Lee, P. Kung, and F.J. Sanchez, "Band-gap narrowing and potential fluctuation in Si-doped GaN," Applied Physics Letters , Vol. 74, No.1, pp. 102-104, January 1999.

M. Razeghi, S. Slivken, A. Matlis, C. Jelen, A. Rybaltowski, and J. Diaz, "High Temperature Continuous Wave Operation of  ~ 8 µm Quantum Cascade Lasers," Applied Physics Letters, Vol. 74, No. 2, pp. 173-175, January 1999.

M. Razeghi S. Slivken, V. Litvinov, and J.R. Meyer, "Relaxation kinetics in quantum cascade laser," Journal of Applied Physics, Vol. 85, No.2, pp. 665-671, January 1999.

M. Razeghi, P. Kung, D. Walker, M. Hamilton, and J. Diaz, "Lateral epitaxial overgrowth of GaN films on sapphire and silicon substrates," Applied Physics Letters, Vol. 74, No. 4, pp. 570-572, January 1999.

M. Razeghi, Walker, E. Monroy, P. Kung, J. Wu, M. Hamilton, F.J. Sanchez, and J. Diaz, "High-speed, low-noise metal-semiconductor-metal ultraviolet photodetectors based on GaN," Applied Physics Letters, Vol. 74 No.5, pp. 762-764, February 1999.

M. Razeghi, D. Wu, B. Lane, A. Rybaltowski, A. Stein, J. Diaz, and H. Yi, "Recent achievement in MIR high power injection laser diodes ( = 3 to 5 µm)," LEOS Newsletter, Vol. 13, No.1, pp. 7-10, February 1999.

M. Razeghi, E. Monroy, M. Hamilton, D. Walker, P. Kung, and F.J. Sanchez, "High-quality visible-blind AlGaN p-i-n photodiodes," Applied Physics Letters, Vol. 74, No.8, 1171-1173, February 1999.

M. Razeghi D. Wu, B. Lane, H. Mohseni, and J. Diaz, "High power asymmetrical InAsSb/InAsSbP/AlAsSb double heterostructure lasers emitting at 3.4 µm," Applied Physics Letters, Vol. 74, No. 9, pp. 1194-1196, March 1999.

M. Razeghi, D.N. Hahn, G.T. Kiehne, G.K.L. Wong, J.B. Ketterson, P. Kung, and A. Saxler, "Phase-matched optical second-harmonic generation in GaN and AlN slab waveguides," Journal of Applied Physics, Vol. 85 No.5, pp. 2497-2501, March 1999.

M. Razeghi and C. Jelen, "AlGanInAs/InP-based Quantum Well Infrared Photodetectors," Opto-Electronics Review, Vol.7, No.1, pp. 1-17, March 1999.

M. Razeghi J.J. Lee, and J.D. Kim, "Novel InTlSb Alloy for Uncooled Long-Wavelength Infrared Photodetectors," Opto-Electronics Review, Vol. , No.1, pp. 19-28, March 1999.

M. Razeghi, "Recent Advance in Semiconductor Mid-Infred Lasers Emitting at 3-12 µm," Opto-Electronics Review, Vol. 7, No.1, pp. 29-58, March 1999.

M. Razeghi, A. Saxler, W.C. Mitchel, and P. Kung, "Aluminum gallium nitride short-period superlattices doped with magnesium," Applied Physics Letters, Vol. 74, No. 14, 9 April 1999, pp. 2023-2025.

M. Razeghi and V.I. Litvinov, "Exciton localization in group-III nitride quantum wells," Physical Review B, Vol. 59, No. 15, , p. 9783-9786, April 1999.

M. Razeghi, S. Slivken, A. Matlis, A. Rybaltowski, and Z. Wu, "Low-Threshold 7.3 µm Quantum Cascade Lasers Grown by Gas-Source Molecular Beam Epitaxy," Applied Physics Letters, Vol. 74, No. 19, pp. 2758-2760, May 1999.

M. Razeghi, B. Lane, Z. Wu, A. Stein, and J. Diaz, "InAsSb/InAsP strained-layer superlattice injection lasers operating at 4.0 µm grown by LP-MOCVD," Applied Physics Letters, Vol. 74, No. 23, , pp. 3438-3440, June 1999.

M. Razeghi, H. Mohseni, J. Wojkowski, G. Brown, and W. Mitchel, "Uncooled InAs/GaSb Type-II infrared detectors grown on GaAs substrate for the 8-12 µm atmospheric window," IEEE Journal of Quantum Electronics, Vol. 35, No.7, pp. 1041-1044, July 1999.

M. Razeghi, J.J. Lee, and J.D. Kim, "Exploration of Novel InSbBi Alloy for Uncooled Infrared Photodetector Applications," Journal of the Korean Physical Society,Vol. 35, , pp. 275-278, July 1999.

M. Razeghi, S. Kim, and M. Erdtmann,"Growth and characterization of InGaAs/InGaP quantum dots for mid-infrared photodetectors," Journal of the Korean Physical Society, Vol. 35, , pp. 303-306, July 1999.

M. Razeghi and H.J. Yi, "Theoretical and Experimental Analysis of High Power Al-free InGaAsP/GaAs ( = 0.808 µm) Laser Diodes," Journal of the Korean Physical Society, Vol. 35, pp. 387-390, July 1999.

M. Razeghi, "Kinetics of Quantum States in Quantum Cascade Lasers: Device Design Principles and fabrication," Special issue of Microelectronics Journal, Vol. 30, No. 10, pp. 1019-1030, October 1999.

C. R. Kannewurf, L. Wang, P. Brazis, M. Rocci, and M.G. Kanatzidis, "a -RuCl₃: A New Host for Polymer Intercalation, Lamellar Polymer/a -RuCl₃ Nanocomposites," Organic/Inorganic Hybrid Materials, R.M. Laine, C. Sanchez, C.J. Brinker, and E. Grannelis, eds, Materials Research Soc. Symp. Proc., Vol. 519 (Materials Research Society, Warrendale, PA, 1998), pp. 257-264.

C. R. Kannewurf, A. Wang, S.C. Cheng, J.A. Belot, R.J. McNeely, J. Cheng, B. Marcordes, T.J. Marks, J.Y. Dai, R.P.H. Chang, J.L. Schindler, and M.P. Chudzik, "Metal-Organic Chemical Vapor Deposition Routes to Films of Transparent Conducting Oxides," Chemical Aspects of Electronic Ceramics Processing,

P.N. Kumta, A.F. Hepp, D.B. Beach, B. Arkles, and J.J. Sullivan, eds, Materials Research Soc. Symp. Proc.,Vol. 495 (Materials Research Society, Warrendale, PA, 1998), pp. 3-10.

C. R. Kannewurf, D.-Y Chung, K.-S. Choi, P.W. Brazis, and M.G. Kanatzidis), "Flux Synthesis of New Multinary Bixmuth Chalcogenides and Their Thermoelectric Properties," Thermoelectric Materials 1998-The Next Generation Materials for Small-Scale Refrigeration and Power Generation Applications,

T.M. Tritt, M.G. Kanatzidis, G.D. Mahan, and H.B. Lyon, Jr., eds, Materials Research Soc. Symp. Proc.,Vol. 545 (Materials Research Society, Warrendale, PA, 1999), pp. 65-74.

C. R. Kannewurf, P.W. Brazis, M. Rocci, D.-Y. Chung, and M.G. Kanatzidis, "Transport Properties of Doped CsBi4Te6 Thermoelectric Materials," Thermoelectric Materials 1998-The Next Generation Materials for Small-Scale Refrigeration and Power Generation Applications, T.M. Tritt, M.G. Kanatzidis, G.D. Mahan, and H.B. Lyon, Jr., eds, Materials Research Soc. Symp. Proc., Vol. 545 (Materials Research Society, Warrendale, PA, 1999), pp. 75-80.

C. R. Kannewurf, K.-S. Choi, D.-Y. Chung, J. Heising, P.W. Brazis, and M.G. Kanatzidis, "Structure and Thermoelectric Properties of SrBiTe₃; 12-Fold Superstructure Caused by Distortion of the Two-Dimensional Te-Nets," Thermoelectric Materials 1998-The Next Generation Materials for Small-Scale Refrigeration and Power Generation Applications, T.M. Tritt, M.G. Kanatzidis, G.D. Mahan, and H.B. Lyon, Jr., eds., Materials Research Soc. Symp. Proc., Vol. 545 (Materials Research Society, Warrendale, PA, 1999), pp. 117-122.

C. R. Kannewurf, S. Sportouch, M. Bastea, P. Brazis, J. Ireland, C. Uher, and M.G. Kanatzidis, "Thermoelectric Properties of the Cubic Family of Compounts AgPbBiQ₃(Q = S, Se, Te). Very Low Thermal Conductivity Materials," Thermoelectric Materials 1998-The Next Generation Materials for Small-Scale Refrigeration and Power Generation Applications, T.M. Tritt, M.G. Kanatzidis, G.D. Mahan, and H.B. Lyon, Jr., eds., Materials Research Soc. Symp. Proc., Vol. 545 (Materials Research Society, Warrendale, PA, 1999), pp. 123-130.

C. R. Kannewurf, L. Iordanidis, P.W. Brazis, and M.G. Kanatzidis, "Synthesis and Thermoelectric Properties of Cs₂Bi_7.33Se₁₂, A₂Bi₈Se₁₃ (A = Rb, Cs), Ba_4-xBi_6+2/3xSe₁₃, and Ba_{3± x} Se₁₅," Thermoelectric Materials 1998-The Next Generation Materials for Small-Scale Refrigeration and Power Generation Applications, T.M. Tritt, M.G. Kanatzidis, G.D. Mahan, and H.B. Lyon, Jr., eds., Materials Research Soc. Symp. Proc.,Vol. 545 (Materials Research Society, Warrendale, PA, 1999), pp. 189-196.

C. R. Kannewurf, M.G. Kanatzidis, D.-Y. Chung, L. Iordanidis, K.-S. Choi, P. Brazis, M. Rocci, and T. Hogan, "Solid State Chemistry Approach to Advanced Thermoelectrics. Ternary and Quaternary Alkali Metal Bismuth Chalcogenides as Thermoelectric Materials," Thermoelectric Materials 1998-The Next Generation Materials for Small-Scale Refrigeration and Power Generation Applications, T.M. Tritt, M.G. Kanatzidis, G.D. Mahan, and H.B. Lyon, Jr., eds., Materials Research Soc. Symp. Proc., Vol. 545 (Materials Research Society, Warrendale, PA, 1999), pp. 233-246.

C. R. Kannewurf, S. Sportouch, P. Larson, M. Bastea, P. Brazis, J. Ireland, C. Uher, and M.G. Kanatzidis, "Observed Properties and Electronic Structure of RniSb Compounds (R = Ho, Er, Tm, Yb and Y).Potential Thermoelectric Materials." Thermoelectric Materials 1998-The Next Generation Materials for Small-Scale Refrigeration and Power Generation Applications, T.M. Tritt, M.G. Kanatzidis, G.D. Mahan, and H.B. Lyon, Jr., eds., Materials Research Soc. Symp. Proc., Vol. 545 (Materials Research Society, Warrendale, PA, 1999), pp. 421-433.

C. R. Kannewurf, M.P. Chudzik, M. Lanagan, and R. Erck, "The Deposition of Biaxially Textured YSZ by Ion Beam Assisted Deposition,"1998 Applied Superconductivity Conference, Palm Desert, CA, September 1998.

C. R. Kannewurf, S. Ehrlich, J. Honig, G. Liedl, J. Spalek, X. Yao, J. Brill, Y. Kuo, D. Powell, and T. Hogan, "Properties of the NiS_2-xSe_x System: Control of the Degree of Electron Correlations," Materials Research Soc. Symp Boston, MA, December 1998.

C. R. Kannewurf, K.-S. Choi, D.-Y. Chung, P.W. Brazis, and M.G. Kanatzidis, "A Pb₄M₇Se₁₅ (A=K, Rb; M=Bi, Sb): New Phases with Controllable Lead Content," Materials Research Soc. Symp, Boston, MA, December 1998.

C. R. Kannewurf, L. Iordanidis, P.W. Brazis and M.G. Kanatzidis, "Thermoelectric Properties of New Ternary and Quaternary Bismuth Chalcogenides," Materials Research Soc. Symp, Boston, MA, December 1998.

C. R. Kannewurf, S. Sportouch, D.-Y. Chung, M.G. Kanatzidis, S.D. Mahanti, T. Hogan, P. Brazis, M. Bastea, and C. Uher, "Rare Earth Intermetallics: RENiSb and RENi Bi (RE=Y, Ho, Er, Tm, Yb) and Their Transport Properties," Materials Research Soc. Symp Boston, MA, December 1998.

C. R. Kannewurf, T.O. Mason, R.P.H. Chang, T.J. Marks, and K.R. Poeppelmeier, "Novel Compound and Solid Solution Transparent Conducting Oxides for Photovollaies," 195th Meeting of the Electrochemical Society, Seattle, WA, May 1999.

C. R. Kannewurf, F. Q. Huang, P. Brazis, and J.A. Ibers, "Synthesis, Structures, Physical Properties, and Theoretical Studies of Novel LnAsTe (Ln = La, Pr, Nd, Dy, Er)," 1999 Midwest High Temperature Solid State Conference, Iowa State University, Ames, Iowa, June 1999.

C. R. Kannewurf, T.J. Marks and R.P.H. Chang, "Oxide Films for Superconducting Electronics and Coating Conductors. New Results Using MOCVD," 1999 ISTEC and MRS International Workshop on Superconductivity, Kauai Island, Hawaii, June 1999.

C. R. Kannewurf, M.P. Chudzik, R.A. Erck, M.T. Lanagan, and V. Balachandran, "Growth of Cerium Oxide Thin Films on Biaxially Textured IBAD YSZ Tapes Using Electron Beam Evaporation," 1999 ISTEC and MRS International Workshop on Superconductivity, Kauai Island, Hawaii, June 1999.

C. R. Kannewurf, P. Brazis, M.A. Rocci, J.R. Ireland, D.-Y. Chung, and M.G. Kanatzidis, "Transport Properties of the Doped Thermoelectric Materials K₂Bi₈Se₁₃ and K_2.5Bi₈Se₁₄ ," Eighteenth International Conference on Thermoelectrics, Baltimore, MD, August 1999.

C. R. Kannewurf, M.G. Kanatzidis, D.-Y. Chung, L. Iordanidis, P. Brazis, M. Rocci, J. Ireland, P. Larson, and S.D. Mahanti, "Complex Bi Chalcogenides as 'Phonon-Glass/Electron-Crystal' Materials for Thermoelectric Applications," Eighteenth International Conferenced on Thermoelectrics, Baltimore, MD, August 1999.

C. R. Kannewurf, D.-Y. Chung, P. Brazis, J. Ireland, and M.G. Kanatzidis, "Synthesis, Structure and Thermoelectric Properties of New Ternary Pb/Bi/Se Compounds," Eighteenth International Conference on Thermoelectrics, Baltimore, MD, August 1999 .

C. R. Kannewurf, S. Sportouch, J. Ireland, P. Brazis, and M.G. Kanatzidis, "Half Heusler Phases and Potential Thermoelectric Materials," Eighteenth International Conference on Thermoelectrics, Baltimore, MD, August 1999.

N. Newman and Z. Y. Fan, "Plasma-assisted MBE synthesis of III-N semiconductors: A model system for determining thermodynamic and kinetic barriers of meta-stable growth," Material Research Society Fall Meeting, Boston, MA, Dec. 1, 1998.

N, Newman, G. Rong, and D. Cronin, "The role of nickel and zirconium doping on the properties of barium zinc tantalate ceramics," Material Research Society Spring Meeting, San Francisco, CA, Apr. 6, 1999.

M. Razeghi, P. Kung, D. Walker, M. Hamilton, and J. Diaz, "High quality LEO growth and characterization of GaN films on Al₂O₃ and Si substrates," Proceedings - SPIE International Conference on Solid State Crystals, Zakopane, Poland, Vol. 3725, pp. 14-20, October 12-16, 1998.

M. Razeghi, J. Wojkowski, J.D. Kim, H. Mohseni and J.J. Lee, "Uncooled long-wavelength infrared photodetectors using narrow bandgap semiconductors," Proceedings Symposium on Compound Semiconductors (ISCS ‘98), October 12-16, Nara, Japan, pp. 91-98, 1998.

M. Razeghi and H. Mohseni, "Growth and Characterization of InAs/GaSb Type-II Superlattice for 8-12 µm Room Temperature Detectors," Proc. Sixth International Symposium on Long Wavelength Infrared Detectors and Arrays, ( Electrochemical Society Fall Meeting), Boston, MA, Vol. 98-21, pp. 170-175, November 5-6, 1998.

M. Razeghi, P. Kung, D. Walker, M. Hamilton, and P. Sandvik, "Development of High-performance III-Nitride-based Semiconductor Devices," Proc. International Symposium on the Physics of Semiconductors and Applications (ISPSA-98), Seoul, Korea, pp.234-243, November 6-7, 1998.

M. Razeghi and S. Kim, "Growth and Characterization of Self-Assembled InGaAs/InGaP Quantum Dots for Mid-Infrared Photoconductive Detector by LP-MOCVD," Proc. Sixth International Symposium on Long Wavelength Infrared Detectors and Arrays, (Electrochemical Society Fall Meeting), Boston, MA, , Vol. 98-21, pp. 219-225, November 5-6, 1998.

M. Razeghi, "Roadmap of Semiconductor Infrared Lasers and Detectors for the 21st Century," Proc. SPIE Conference on Photodetectors: Materials and Devices IV, San Jose, CA, Vol. 3629, pp. 2-40, January 27-29, 1999.

M. Razeghi, C. Jelen, S. Slivken, and G.J. Brown, "Multi-color 4-20 µm In-P-based Quantum Well Infrared Photodetectors," Proc. SPIE Conference on Photodetectors: Materials and Devices IV, San Jose, CA, Vol. 3629, pp. 147-154, January 27-29, 1999.

M. Razeghi, D. Walker, P. Kung, P. Sandvik, J. Wu, M. Hamilton, I.H. Lee, and J. Diaz, "Al_xGa_1-xN p-i-n Photodiodes on Sapphire Substrates," Proc. SPIE Conference on Photodetectors: Materials and Devices IV, San Jose, CA, Vol. 3629, pp. 193-198, January 27-29, 1999.

M. Razeghi, A. Saxler, M. Ahoujja, W.C. Mitchel, P. Kung, and D. Walker, "Electrical Characterization of Al_xGa_1-xN for UV Photodetector Applications," Proc. SPIE Conference on Photodetectors: Materials and Devices IV, San Jose, CA, Vol. 3629, pp. 211-222, January 27-29, 1999.

M. Razeghi P. Kung, D. Walker, P. Sandvik, M. Hamilton, J. Diaz, and I.H. Lee , "Schottky MSM Photodetectors on GaN Films Grown on Sapphire by Lateral Epitaxial Overgrowth," Proc. SPIE Conference on Photodetectors: Materials and Devices IV, San Jose, CA, Vol. 3629, pp. 223-229, January 27-29, 1999.

M. Razeghi, J.D. Kim, H. Mohseni, J.S. Wojkowski, and J.J. Lee "Growth of InAsSb Alloys on GaAs and Si Substrates for Uncooled Infrared Photodetector Applications," Proc. SPIE Conference on Photodetectors: Materials and Devices IV, San Jose, CA, Vol. 3629, San Jose, CA, pp. 338-348, January 27-29, 1999.

M. Razeghi, J.S. Wojkowski, H. Mohseni, and J.D. Kim, "Demonstration of InAsSb/AlInSb Double Heterostructure Detectors for Room Temperature Operation in the 5-8 µm Wavelength Range," Proc. SPIE Conference on Photodetectors: Materials and Devices IV, San Jose, CA, Vol. 3629, pp. 357-363, January 27-29, 1999.

M. Razeghi S. Kim, and M. Erdtmann,"Characteristics of Self-Assembled InGaAs/InGaP Quantum Dot Mid-Infrared Photoconductive Detectors Grown by Low Pressure MOCVD," Proc. SPIE Conference on Photodetectors: Materials and Devices IV, San Jose, CA, Vol. 3629, pp. 371-380, January 27-29, 1999.

M. Razeghi, H. Ohsato, T. Kato, and T. Okuda, "Internal Stress Around Micropipes in 6H-SiC Substrates," Proc. SPIE Conference on Photodetectors: Materials and Devices IV, San Jose, CA, Vol. 3629, pp. 393-399, January 27-29, 1999.

C.R. Kanewurf, "Beam-Induced Biaxial Texture in Oxide Buffer Layers for Coating Conductors," Third STCS-CNRS Workshop, Northwestern University, Evanston, IL, June 1999.

C.R. Kanewurf, "Synthesis, Structures, Physical Properties, and Theoretical Studies of LaCu_0.40Te₂, Nd Cu_0.37Te₂, Sm Cu_0.34Te₂, Gd Cu_0.33 Te₂ and Dy Cu_0.32 Te₂," Argonne National Laboratory, July 1999.

N.Newman, "MBE Synthesis of III-N Semiconductors: A model system of meta-stable growth," Lawrence Symposium on Critical Issues in Epitaxy, Mesa, Arizona, Jan. 7,1999.

N, Newman "Tailoring the Properties of GaAs and GaAlN Thin-films and Interfaces using Non-stoichiometric Defects," Seminar series for the Center for Solid State Sciences at Arizona State University, Tempe, Arizona, Nov. 9, 1998.

N. Newman, "Ferroelectric/dielectric filters for rf systems," ONR Workshop on High Performance Tunable Filters for the Advanced Multifunction rf system (AMRFS), Rosslyn, VA, July 29, 1999.

M. Razeghi, "Recent Advance fo Mid-Infrared Semiconductor Lasers," Semiconductor Science and Technology ‘98, La Jolla, CA, September 7-11, 1998.

M. Razeghi, "Quantum Well Infrared Photodetectors (QWIPs) for IR Imaging," Physics at the Turn of the 21st Century Conference, St. Petersburg, Russia, September 28-October 2, 1998.

M. Razeghi, "Recent Advance of III-Nitrides for Photonic and Optoelectronic Devices," International Conference on Solid State Crystals - Materials Science and Applications, Zakopane, Poland, October 12-16, 1998.

M. Razeghi, "Uncooled Long-Wavelength Infrared Photodetectors Using Narrow Band Gap Semiconductors," International Symposium on Compound Semiconductors (ISCS), Nara, Japan, October 12-16, 1998.

M. Razeghi, "Growth and Characterization of InAsGaSb Type II Superlattices for 8-12 µm Room Temperature Detectors," 6th International Symposium on Long Wavelength Infrared Detectors and Arrays: Physics and Applications, Electrochemical Society, Boston, MA, November 5-6, 1998.

M. Razeghi, "Development of high-performance III-Nitride-based semiconductor devices," 9th International Symposium on the Physics of Semiconductors and Applications (ISPSA-98), Seoul, Korea, November 6-7, 1998.

M. Razeghi, "Recent Advances in Semiconductor Infrared Lasers," Chemistry Department, Texas A&M University, College Station, TX, December 10-11, 1998.

M. Razeghi, "Roadmap of Semiconductor Infrared Lasers abd Detectors for the 21st Century," SPIE Photonics West '99, "Photodetectors: Materials and Devices IV, San Jose, CA, January 24-29, 1999.

M. Razeghi, " Electrical Characterization of Al_xGa_1-xN for UV Photodetector Applications," SPIE Photonics West '99, "Photodetectors: Materials and Devices IV, San Jose, CA, January 24-29, 1999.

M. Razeghi, "LEO of GaN on sapphire and Si substrates," Workshop on Compound Semiconductor Materials and Devices (WOCSEMMAD ‘99), New Orleans, LA, February 22-24, 1999.

M. Razeghi, "UV, MSM and p-i-n detectors, UV blue laser diodes," Workshop on Compound Semiconductor Materials and Devices (WOCSEMMAD ‘99), New Orleans, LA, February 22-24, 1999.

M. Razeghi, "Recent Advances and Future Trends for Compound Semiconductor Optoelectronic Devices," Compound Semiconductor Outlook ‘99 Conference, San Diego, CA, March 1-3, 1999.

M. Razeghi, "Large Area Lateral Epitaxial Overgrowth of GaN on Si (LALEOSI)," Naval Research Laboratory, March 16, 1999.

M. Razeghi, "Demonstration of Uncooled InAsSb Photodetectors for Military Sensors," DARPA Workshop on Uncooled Thermal Imaging Sensors and Infrared Three-Dimensional Imaging, Alexandria, VA, March 16-17, 1999.

M. Razeghi, "High Power 3-5 µm InAsSb-based Lasers," DARPA Workshop - Photonic Wavelength and Spatial Signal Processing (WASSP), Arlington, VA, May 3-4, 1999.

M. Razeghi, "Highlights of High Power Infrared Injection Laser Diodes (3-10 µm)," Naval Research Laboratory, Washington, DC, May 5, 1999.

M. Razeghi, "High Power 3-12 µm Semiconductor Lasers: Roadmap for the 21st Century," Workshop on Frontier in Electronics (WOFE-99), Grenoble, France, May 30-June 4, 1999.

M. Razeghi, "LEO of III-Nitride on Al₂ O₃ and Si substrates," Lateral Epitaxial Overgrowth (From Theory to Design) Workshop, Juneau, Alaska, August 2-6, 1999.

M. Razeghi, "Solard Blind Detectors Arrays," DARPA/MTO Optoelectronics Review Meeting, San Diego, CA, August 2-5, 1999.

M. Razeghi, "MOCVD Growth and Characterization of GaN on Si Substrates," Gallium Nitride Electronic Device Workshop, Cornell University, Ithaca, NY, August 16-17, 1999.

N. Newman, session chair, "The role of nickel and zirconium doping on the properties of barium zinc tantalate ceramics," at Material Research Society Spring Meeting, San Francisco, CA, Apr. 8, 1999.

M. Razeghi, session chair, "Intersubband Transition and Relaxation," at International Symposium on Compound Semiconductors (ISCS), Nara, Japan, October 12-16, 1998.

M. Razeghi, conference co-chair, SPIE Photonics West '99, "Photodetectors: Materials and Devices IV, San Jose, CA, January 24-29, 1999.

M. Razeghi, session chair, SPIE Photonics West '99, "Photodetectors: Materials and Devices IV," San Jose, CA, January 24-29, 1999.

M. Razeghi, U.S. Patent 5,834,331, III-Nitride Laser and Detection Device and Method of Making / III-Nitride Based Detectors, Nov. 10, 1998.

M. Razeghi, U.S. Patent 5,831,277, III-Nitride Superlattice Structures / The Method of Increasing Acceptor Level and Decreasing Contact Resistance III-Nitride Photonic and Opto-electronic Devices, Nov. 3, 1998.

M. Razeghi, U.S. Patent 5,807,765, Processing of Sb-based Lasers, Sept. 15, 1998.