COURSE TITLE: ECE 388 Microelectronic Technology

CATALOG DESCRIPTION: Physics and technology of nanoscale photonic and electronic devices. Bulk crystal, thin film and epitaxial growth technologies. Nanotechnology processing: diffusion oxidation, ion implantation, annealing, etching, and photolithography. Nanoscale optoelectronic and electronic devices.

REQUIRED TEXTS: M. Razeghi, Fundamentals of Solid State Engineering, Kluwer Academic Publishers, 2002.

REFERENCE TEXTS:

1. M. Razeghi, MOCVD Challenge Vol. 1

2. M. Razeghi, MOCVD Challenge Vol. 2

COURSE COORDINATOR: Manijeh Razeghi

COURSE GOALS: Nanotechnology; The course is designed to teach the elements of advanced science and technology used in nanotechnology materials and nanodevice fabrication. The topics taught include the fundamentals of: quantum mechanics, nanoscale quantum structures, bulk semiconductor and epitaxial growth techniques, vacuum technology, diffusion and implantation, wafer manufacturing, and processing.

PREREQUISITES: ECE 223 or consent of instructor.

DETAILED COURSE TOPICS:

WEEK 1: Review of concepts in quantum mechanics (limits of classical mechanics, basic concepts of quantum mechanics, quantization of electromagnetic field, photon, wave-particle duality, wave function, probability of presence, Schrödinger equation, quantization of energy levels and momenta, tunneling, infinite potential well, finite potential well).

Review of electrons and energy band structures in crystals (Bloch theorem, Kronig-Penney model, energy bands, nearly-free electron approximation, tight binding approximation, Heisenberg uncertainty principle, Fermi energy, Fermi distribution, holes, first Brillouin zone, band structures in metals).

WEEK 2: Compound semiconductors and crystal growth techniques (1/2): III-V semiconductor alloys, bulk single crystal growth techniques (Czochralski, Bridgman, float zone).

WEEK 3: Compound semiconductors and crystal growth techniques (2/2): liquid phase epitaxy, vapor phase epitaxy, metalorganic chemical vapor deposition, molecular beam epitaxy.

WEEK 4: Semiconductor device nanotechnology (1/2): oxidation, diffusion.

WEEK 5: Semiconductor device nanotechnology (2/2): ion implantation, characterization of sheet resistivity and junction depth.

WEEK 6: Semiconductor nanodevice processing: photolithography, electron beam lithography, etching, metallization, packaging of nanodevices.

WEEK 7: Semiconductor lasers: general laser theory, stimulated emission, resonant cavity, waveguides, beam divergence, ruby laser, population inversion, threshold condition, output power, homojunction and heterojunction lasers, separate confinement, quantum well lasers, quantum cascade lasers, type II lasers, quantum dot and vertical cavity surface emitting lasers.

WEEK 8: Photodetectors: electromagnetic radiation, responsivity, noise, detectivity, frequency response, thermal detectors, photon detectors, photovoltaic and photoconductive detectors, avalanche photodiodes, Schottky barrier photodiodes, metal-semiconductor-metal photodiodes, type-II superlattice detectors, quantum well intersubband photodetectors, photoelectromagnetic detectors.

WEEK 9: Semiconductor device laboratory demonstration: semiconductor growth technology, device processing technology and device measurement techniques.

WEEK 10: Project presentations.

COMPUTER USAGE: None.

HOMEWORK ASSIGNMENTS: Homework is assigned weekly to reinforce concepts learned in class.

PROJECTS: The students will work in group on a project to design, fabricate, and test an optoelectronic circuit, or build a model related to the crystal structure of semiconductors. A written report and an oral presentation will be prepared.

GRADES:

Homework - 25%

Midterm - 25%

Project - 25%

Final - 25%

COURSE OBJECTIVES: When a student completes this course, s/he should understand nanotechnology by being able to:

1. Recognize and classify a crystal, recognize its structural properties, including symmetry operations, be knowledgeable in common semiconductor crystal structures.

2. Understand the basic concepts of quantum mechanics and be able to solve basic quantum mechanical problems.

3. Understand the physical meaning of energy band diagrams of semiconductor, the concept of effective masses and Brillouin zones.

4. Be knowledgeable in the various modern technologies used in nanotechnology to grow bulk crystals, thin films, and nanoscale quantum structures, including the epitaxy of semiconductors, understand the advantages and drawbacks of each of the techniques. Be familiar with Vegard's law and the concept of bandgap bowing.

5. Design compound semiconductor laser device structure emitting light at 1.3 mm and 1.5 mm.

6. Manipulate and calculate physical parameters related to nanotechnology, such as impingement rates, mean free paths and residual partial pressures.

7. Solve simple problems related to thin film deposition techniques (evaporation, sputtering, chemical vapor deposition etc....), such as for example determining the film growth rate for various growth conditions.

8. Interpret common semiconductor materials characterization data, as published in modern journal articles.

9. Design complete doping processes to achieve p-n junctions at a desired depth using successive diffusion and ion implantation experiments.

10. Design a photolithographic mask, design a sequence of steps in the processing of a semiconductor wafer into a final operational device, involving photolithography, electron beam lithography, etching, metallization and passivation.

ABET:

50 % Science , 50 % Engineering