COURSE TITLE: ECE 384 Solid State Electronic Devices

CATALOG DESCRIPTION: Applications of energy band models for semiconductors. Carrier statistics and transport. Diodes, bipolar and field-effect transistors. Integrated circuits. Heterojunction devices.

REQUIRED TEXTS:

1. M. Razeghi, Fundamentals of Solid State Engineering, Kluwer Academic Publishers, 2002.

2. + handouts.

REFERENCE TEXT: R.F. Pierret, Semiconductor Device Fundamentals, Addison-Wesley, 1996.

COURSE COORDINATOR: Manijeh Razeghi

COURSE GOALS: The course is an introduction to semiconductor fundamentals and applications to the electronic devices. Course creates the background in the physics of the compound semiconductor-based electronic devices and also prepare students to advanced courses in solid state and quantum electronics. The course provides an opportunity for students to continue education in undertaking advanced study and research in the variety of different branches of semiconductor device applications. Topics include the background solid state and semiconductor physics, and basic principles of electronic devices operation.

PREREQUISITES: ECE 223, ECE 381, or consent of instructor.

DETAILED COURSE TOPICS:

WEEK 1: Review of the crystalline properties of solids (structure of crystals, Bravais lattice, crystal systems, unit cell, symmetry properties, point groups, space groups, Miller indices, packing factor).

WEEK 2: Review of electrons and energy band structures in crystals (Bloch theorem, Kronig-Penney model, energy bands, nearly-free electron approximation, tight binding approximation, Heisenberg uncertainty principle, Fermi energy, Fermi distribution, holes, first Brillouin zone, band structures in metals).

WEEK 3: Equilibrium electrical properties of semiconductors (1/2): intrinsic and extrinsic semiconductors, n-type doping, p-type doping.

WEEK 4: Equilibrium electrical properties of semiconductors (2/2): conduction band effective density of states, valence band effective density of states, mass action law, charge neutrality, Fermi energy, Fermi integral, electron and hole concentration.

WEEK 5: Non-equilibrium electrical properties of semiconductors (1/2): drift, drift current, Ohm’s law, resistivity, conductivity, carrier collision and scattering, Hall effect, Lorentz force, mobility.

WEEK 6: Non-equilibrium electrical properties of semiconductors (2/2): diffusion, diffusion current, diffusion length, Einstein relations, carrier generation and recombination mechanisms, carrier lifetime, capture cross section, quasi-Fermi energy.

WEEK 7: Semiconductor junctions (1/2): ideal p-n junction, built-in potential, drift and diffusion currents, depletion width, diode equation, forward bias, reverse bias, minority carrier lifetime, capacitance.

WEEK 8: Semiconductor junctions (2/2): breakdown, avalanche breakdown, Zener breakdown, metal-semiconductor junctions, ohmic and Schottky contacts.

WEEK 9: Bipolar junction transistor (BJT): two or three terminal transistor, operational concepts, static characteristics, modeling and steady-state response, dynamic response, pnpn devices,

WEEK 10: Field effect devices: qualitative description, theory of operation, quantitative analysis, AC response, metal-oxide-semiconductor field effect transistor (MOSFET), threshold voltage, effective mobility, modern field effect transistors (FET), small dimension effects, short channel, narrow width, velocity saturation, ballistic transport.

COMPUTER USAGE: None.

HOMEWORK ASSIGNMENTS: Homework is assigned weekly to reinforce concepts learned in class.

LABORATORY PROJECTS: None.

GRADES:

Homework - 50%

Final - 50%

COURSE OBJECTIVES: When a student completes this course, s/he should be able to:

1. Understand the basic physics of semiconductor electronic devices. The importance of electrons and holes in semiconductors, the charge density and distribution, the charge transport mechanisms.

2. Understand the physics of a p-n junction.

3. Understand the internal workings of the most basic solid state electronic devices.

ABET: 80 % Science, 20 % Engineering