COURSE TITLE: ECE 250 Physical Electronics and Devices

CATALOG DESCRIPTION: The physical basis of electronic and optoelectronic devices and their application in analog and digital systems. Diodes, transistors, LEDs, photodetectors, and lasers are described, and their properties are explored.

REQUIRED TEXT: B. Streetman and S. Banerjee, Solid State Electronic Devices, Prentice Hall, latest edition.

REFERENCE TEXTS: Burns, Stanley G. and Bond, Paul R., Principles of Electronic Circuits, PWS Publishing Co., Boston, MA 1997.

COURSE COORDINATOR: Mary R. Phillips

COURSE GOALS: To teach the fundamentals of discrete semiconductor devices and their applications. The chemical, electronic, and physical properties of semiconductors are examined. Basic operating principles and models of semiconductor devices including the p-n junction, the Schottky barrier, the bipolar transistor and the field effect transistor are quantitatively investigated. Models for optoelectronic devices including photodetectors and lasers are presented. The use of semiconductor devices in analog circuits, digital circuits, and optoelectronic applications are analyzed.

PREREQUISITES: Physics 135-2 and ECE 221.

PREREQUISITES BY TOPIC:

1. Linear circuit analysis

2. Electromagnetics

3. Differential equations

COURSE TOPICS:

1. Intrinsic and Extrinsic Properties of Semiconductors

2. Semiconductor Diodes

3. Semiconductor Diode Circuits

4. The Field Effect Transistor (FET)

5. The Bipolar Junction Transistor (BJT)

6. Optoelectronic Devices

7. Advanced Devices

COMPUTER USAGE: Computer math program, such as MATLAB, recommended for homework analysis and simulation.

LABORATORY: None

GRADES:

Grades are based on homework, in-class participation, one midterm test, and final exam.

COURSE OBJECTIVES: When a student completes this course, s/he should be able to:

1. Understand the operating principles and be able to determine quantitatively the relationship between material parameters and semiconductor device performance for

a) Schottky barrier diodes

b) P/n junction diodes

c) LEDs, photodetectors, lasers

d) Bipolar junction transistors

e) MOSFET

f) MESFET

g) JFET

2. Analyze electrical properties and design simple diode circuits to given design specification

3. Understand requirements for proper biasing of D. C. and small-signal A. C. circuits using

a) Bipolar junction transistors

b) MOSFET

c) MESFET

d) JFET

4. Analyze and design simple BJT and FET transistor D. C. and small-signal A. C. circuits

a) Voltage regulator circuits

b) Logic circuits

ABET CONTENT CATEGORY: 100% Engineering (Design component).